Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

In this study, we report on the deposition of a highly crystalline AlN interfacial layer GaN at 330 °C via plasma-enhanced atomic (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as Al N precursors, respectively. The crystallinity mass density examined using X-ray diffraction (XRD) reflectivity (XRR) measurements, respectively, chemical bonding states concentrations determined by photoelectron spectroscopy (XPS). AlN/n-GaN interface characteristics analyzed TOF-SIMS STEM, electrical evaluated metal-insulator-semiconductor (MIS) capacitors. PEALD process exhibited high linearity between thickness number cycles without any incubation period, well low carbon impurity less than 1% crystal quality even temperature °C. Moreover, surface oxidation was successfully suppressed layer. Furthermore, enhanced achieved MIS capacitor with compared to those AlN.